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PD - 93765
IRG4IBC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast Co-Pack IGBT
VCES = 600V VCE(on) typ. = 2.15V
Features
* UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation * IGBT co-packaged with HEXFRED(R) ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-220 Full-Pak
G E
@VGE = 15V, IC = 5.0A N-channel
tf(typ.) = 140ns
Benefits
* Generation 4 IGBTs offer highest efficiencies available * IGBTs optimized for specific application conditions * HEXFRED(R) diodes optimized for performance with IGBTs Minimized recovery characteristics require less/no snubbing
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VISOL VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolated Voltage, Terminal to case, t=1min Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec Mounting Torque, 6-32 or M3 Screw
Max.
600 6.8 3.9 27 27 3.9 27 2500 20 25 10 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
V W
C
Thermal Resistance
Parameter
RJC RJC RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight
Typ.
--- --- --- 2.1 (0.075)
Max.
5.0 9.0 65 ---
Units
C/W g (oz)
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10/27/99
IRG4IBC10UD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
DV(BR)CES/DTJ
VCE(on)
VGE(th) DVGE(th)/DTJ gfe ICES VFM IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Temperature Coeff. of Breakdown Voltage -- 0.54 Collector-to-Emitter Saturation Voltage -- 2.15 -- 2.61 -- 2.30 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -8.7 Forward Transconductance 2.8 4.2 Zero Gate Voltage Collector Current -- -- -- -- Diode Forward Voltage Drop -- 1.5 -- 1.4 Gate-to-Emitter Leakage Current -- --
Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, I C = 1.0mA 2.6 IC = 5.0A VGE = 15V See Fig. 2, 5 -- V IC = 8.5A -- IC = 5.0A, TJ = 150C 6.0 VCE = VGE, I C = 250A -- mV/C VCE = VGE, I C = 250A -- S VCE = 100V, IC = 5.0A 250 A VGE = 0V, V CE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150C 1.8 V IC = 4.0A See Fig. 13 1.7 IC = 4.0A, TJ = 125C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Q gc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr I rr Q rr di(rec)M/dt Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Diode Peak Reverse Recovery Current -- -- Diode Reverse Recovery Charge -- -- Diode Peak Rate of Fall of Recovery -- During tb -- Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Typ. 15 2.6 5.8 40 16 87 140 0.14 0.12 0.26 38 18 95 250 0.45 7.5 270 21 3.5 28 38 2.9 3.7 40 70 280 235 Max. Units Conditions 22 IC = 5.0A 4.0 nC VCC = 400V See Fig. 8 8.7 VGE = 15V -- TJ = 25C -- ns IC = 5.0A, VCC = 480V 130 VGE = 15V, RG = 100W 210 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 18 0.33 -- TJ = 150C, See Fig. 11, 18 -- ns IC = 5.0A, VCC = 480V -- VGE = 15V, RG = 100W -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 42 ns TJ = 25C See Fig. 57 TJ = 125C 14 IF = 4.0A 5.2 A TJ = 25C See Fig. 6.7 TJ = 125C 15 VR = 200V 60 nC TJ = 25C See Fig. 105 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17
Details of note through are on the last page
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IRG4IBC10UD
6.0
5.0
Load Current ( A )
4.0
Square w ave:
For both: Duty cycle : 50% Tj = 125C Tsink = 90C Gate drive as specified Power Dissipation = 7.0W
60% of rated voltage
3.0
2.0
1.0
Ideal diodes
0.0 0.1 1 10 100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
TJ = 25 oC
10
TJ = 150 oC
I C , Collector-to-Emitter Current (A)
10
TJ = 150 o C
1
TJ = 25 o C V CC = 50V 5s PULSE WIDTH
5 6 7 8 9 10 11 12 13 14
0.1 1
V GE = 15V 20s PULSE WIDTH
10
1
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4IBC10UD
8 5.0
VCE , Collector-to-Emitter Voltage(V)
VGE = 15V 80 us PULSE WIDTH IC = 10 A
Maximum DC Collector Current(A)
6
4.0
4
3.0
IC =
5A
2
2.0
IC = 2.5 A
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
10
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
Thermal Response ( Z thJC )
D = 0.50
1
0.20 0.10 0.05 0.02 0.01
P DM
0.1
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty factor D = t 1 /t
t
1 t2
2
2. Peak TJ = P D Mx Z thJC + T C
0.01 1E-005 0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4IBC10UD
500
VGE , Gate-to-Emitter Voltage (V)
100
400
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 5.0A
16
C, Capacitance (pF)
300
Cies
12
200
8
100
Coes Cres
4
0 1 10
0 0 4 8 12 16
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
0.30 10
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C I C = 5.0A
RG =100 Ohm VGE = 15V VCC = 480V IC = 10 A IC = 5.0A 5A IC = 2.5 A
1
0.25
0.1
0.20 50 60 70 80 90 100
0.01 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG , Gate Resistance (Ohm)
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4IBC10UD
1.4
Total Switching Losses (mJ)
RG TJ 1.2 VCC VGE
1.0 0.8 0.6 0.4 0.2
= 100 Ohm = 150 C = 480V = 15V
100
VGE = 20V T J = 125 o C
I C, Collector Current (A)
10
SAFE OPERATING AREA
0.0 0 2 4 6 8 10
1 1 10 100 1000
I C , Collector-to-emitter Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current ( A )
10
TJ = 150C TJ = 125C T = 25C
J
1
0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0
F orward V oltage D rop - VFMF(V) ) VM (V
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4IBC10UD
50 14 VR = 20 0V T J = 1 25 C T J = 2 5C
45
I F = 8.0A I F = 4.0A
12
I F = 8.0A
10
40
I F = 4.0A
trr- (nC)
35
Irr- ( A)
VR = 2 00 V T J = 1 2 5C T J = 2 5 C 1000
8
6
30 4
25
2
20 100
di f /dt - (A/ s)
0 100
1000
di f /dt - (A/ s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200 VR = 2 00 V T J = 1 25C T J = 2 5C 160
Fig. 15 - Typical Recovery Current vs. dif/dt
1000 VR = 20 0V T J = 1 25 C T J = 2 5C
I F = 8.0A
I F = 8.0A
di (rec) M/dt- (A /s)
I F = 4.0A
120
I F = 4.0A
Qrr- (nC)
80 40
0 100
di f /dt - (A/ s)
1000
100 100
A 1000
di f /dt - (A/ s )
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4IBC10UD
Same ty pe device as D .U.T. 90% Vge +Vge
V ce 80% of Vce 430F D .U .T. Ic 10% Vce Ic 5 % Ic td (o ff) tf 9 0 % Ic
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
E o ff =
t1 + 5 S V c e Ic Vceic d tdt t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
trr id ddt Ic t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr V cc
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ieIc t dt Vce d t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
t4 V d idIc t dt Vc d t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4IBC10UD
V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Fig. 18e - Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000 F 100 V Vc*
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
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IRG4IBC10UD
TO-220 Full-Pak Package Outline
1 0 .6 0 (.4 1 7 ) 1 0 .4 0 (.4 0 9 ) o 3 .4 0 (.1 3 3 ) 3 .1 0 (.1 2 3 ) -A 3 .7 0 (.1 4 5 ) 3 .2 0 (.1 2 6 ) 4 .8 0 (.1 8 9 ) 4 .6 0 (.1 8 1 )
2 .8 0 (.1 1 0 ) 2 .6 0 (.1 0 2 ) L E A D A S S IG N M E N T S LEAD ASSIGMENTS 1 - G A GATE 1- T E 2- A IN 2 - D R COLLECTOR 3 - S3- EMITTER OURCE
7 .1 0 (.2 8 0 ) 6 .7 0 (.2 6 3 )
1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 )
1 .1 5 (.0 4 5) M IN . 1 2 3
NOTES : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4.5 M , 1 9 8 2 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 .3 0 (.1 3 0 ) 3 .1 0 (.1 2 2 ) -B1 3 .7 0 (.5 4 0 ) 1 3 .5 0 (.5 3 0 ) C D
A 1 .4 0 (.0 5 5 ) 3X 1 .0 5 (.0 4 2 ) 2 .5 4 (.1 0 0 ) 2X 0 .9 0 (.0 35 ) 3 X 0 .7 0 (.0 28 ) 0 .2 5 (.0 1 0 ) M AM B 3X 0 .4 8 (.0 1 9 ) 0 .4 4 (.0 1 7 )
B
2 .8 5 (.1 1 2 ) 2 .6 5 (.1 0 4 )
M IN IM U M C R E E P A G E D IS T A N C E B E T W E E N A -B -C -D = 4 .8 0 (.1 89 )
Notes
Repetitive rating: VGE=20V; Pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG= 100 (figure 19) Pulse width 80s, duty factor 0.1%. Pulse width 5.0s, single shot.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 10/99
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